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? semiconductor components industries, llc, 2001 may, 2001 rev. 1 1 publication order number: bzx79c2v4rl/d bzx79c2v4rl series 500 mw do-35 hermetically sealed glass zener voltage regulators this is a complete series of 500 mw zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range 2.4 v to 33 v ? esd rating of class 3 (>16 kv) per human body model ? do204ah (do35) package smaller than conventional do204aa package ? double slug type construction ? metallurgical bonded construction mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings (note 1.) rating symbol value unit max. steady state power dissipation @ t l 75 c, lead length = 3/8 derate above 75 c p d 500 4.0 mw mw/ c operating and storage temperature range t j , t stg 65 to +200 c 1. some part number series have lower jedec registered ratings. device package shipping ordering information bzx79cxxxrl axial lead 5000/tape & reel bzx79cxxxrl2* axial lead axial lead case 299 glass http://onsemi.com 5000/tape & reel cathode anode * the a2o suffix refers to 26 mm tape spacing. l 79c xxx yww l = assembly location 79cxxx = device code = (see table next page) y = year ww = work week marking diagram
zener voltage regulator i f v i i r i zt v r v z v f bzx79c2v4rl series http://onsemi.com 2 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 100 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt v br temperature coefficient of v br (typical) i r reverse leakage current (t a = 25 c) @ v r v r breakdown voltage i f forward current v f forward voltage @ i f c capacitance (typical) electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 100 ma for all types) zener voltage (note 3.) z zt (note 4.) @i leakage current v br c v 0 device device v z (volts) @ i zt @ i zt (f = 1.0 khz) i r @ v r mv/ c v z = 0, f = 1.0 mhz d ev i ce (note 2.) d ev i ce marking min nom max ma m a volts min max pf bzx79c2v4rl 79c2v4 2.28 2.4 2.52 5 100 100 1 3.5 0 255 bzx79c2v7rl 79c2v7 2.57 2.7 2.84 5 100 75 1 3.5 0 230 bzx79c3v0rl 79c3v0 2.85 3.0 3.15 5 95 50 1 3.5 0 215 bzx79c3v3rl 79c3v3 3.14 3.3 3.47 5 95 25 1 3.5 0 200 bzx79c3v6rl 79c3v6 3.42 3.6 3.78 5 90 15 1 3.5 0 185 bzx79c3v9rl 79c3v9 3.71 3.9 4.10 5 90 10 1 3.5 0.3 175 bzx79c4v7rl 79c4v7 4.47 4.7 4.94 5 80 3 2 3.5 0.2 130 bzx79c5v1rl 79c5v1 4.85 5.1 5.36 5 60 2 2 2.7 1.2 110 bzx79c5v6rl 79c5v6 5.32 5.6 5.88 5 40 1 2 2.0 2.5 95 bzx79c6v2rl 79c6v2 5.89 6.2 6.51 5 10 3 4 0.4 3.7 90 bzx79c6v8rl 79c6v8 6.46 6.8 7.19 5 15 2 4 1.2 4.5 85 bzx79c7v5rl 79c7v5 7.13 7.5 7.88 5 15 1 5 2.5 5.3 80 bzx79c8v2rl 79c8v2 7.79 8.2 8.61 5 15 0.7 5 3.2 6.2 75 bzx79c10rl 79c10 9.5 10 10.5 5 20 0.2 7 4.5 8.0 70 bzx79c12rl 79c12 11.4 12 12.6 5 25 0.1 8 6.0 10 65 bzx79c15rl 79c15 14.25 15 15.75 5 30 0.05 10.5 9.2 13 55 bzx79c16rl 79c16 15.2 16 16.8 5 40 0.05 11.2 10.4 14 52 bzx79c18rl 79c18 17.1 18 18.9 5 45 0.05 12.6 12.9 16 47 bzx79c22rl 79c22 20.9 22 23.1 5 55 0.05 15.4 16.4 20 34 bzx79c24rl 79c24 22.8 24 25.2 5 70 0.05 16.8 18.4 22 33 bzx79c27rl 79c27 25.65 27 28.35 5 80 0.05 18.9 23.5 30 bzx79c30rl 79c30 28.5 30 31.5 5 80 0.05 21 26 27 bzx79c33rl 79c33 31.35 33 34.65 5 80 0.05 23.1 29 25 2. tolerance and voltage designation tolerance designation the type numbers listed have zener voltage min/max limits as shown. 3. reverse zener voltage (v z ) measurement reverse zener voltage is measured under pulse conditions such that t j is no more than 2 c above t a . 4. zener impedance (z z ) derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 1.0 khz.
bzx79c2v4rl series http://onsemi.com 3 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 t l , lead temperature ( c) figure 1. steady state power derating heat sinks 3/8" 3/8" p d , steady state power dissipation (watts)
bzx79c2v4rl series http://onsemi.com 4 application note e zener voltage since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for dc power: d t jl = q jl p d . for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz t j . q vz , the zener voltage temperature coefficient, is found from figures 4 and 5. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 7. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 7 be exceeded. ll 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1 2.4-60v 62-200v l, lead length to heat sink (inch) jl , junctiontolead thermal resistance ( c/w) q figure 2. typical thermal resistance typical leakage current at 80% of nominal breakdown voltage +25 c +125 c 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 910 1112131415 v z , nominal zener voltage (volts) i , leakage current ( a) m r figure 3. typical leakage current
bzx79c2v4rl series http://onsemi.com 5 +12 +10 +8 +6 +4 +2 0 -2 -4 2345 678 9101112 v z , zener voltage (volts) figure 4a. range for units to 12 volts v z @i zt (note 2) range temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) 100 70 50 30 20 10 7 5 3 2 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100 v z , zener voltage (volts) figure 4b. range for units 12 to 100 volts range v z @i z (note 2) 120 130 140 150 160 170 180 190 200 200 180 160 140 120 100 v z , zener voltage (volts) figure 4c. range for units 120 to 200 volts v z @i zt (note 2) +6 +4 +2 0 -2 -4 3 4 56 78 v z , zener voltage (volts) figure 5. effect of zener current note: below 3 volts and above 8 volts note: changes in zener current do not note: affect temperature coefficients 1ma 0.01ma v z @i z t a =25 c 1000 c, capacitance (pf) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 v z , zener voltage (volts) figure 6a. typical capacitance 2.4100 volts t a =25 c 0v bias 1v bias 50% of v z bias 100 70 50 30 20 10 7 5 3 2 1 120 140 160 180 190 200 220 v z , zener voltage (volts) figure 6b. typical capacitance 120200 volts t a =25 c 1voltbias 50% of v z bias 0 bias q v z , temperature coefficient (mv/ c) 20ma c, capacitance (pf) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c)
bzx79c2v4rl series http://onsemi.com 6 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 p pk , peak surge power (watts) pw, pulse width (ms) 5% duty cycle 10% duty cycle 20% duty cycle 11v-91v nonrepetitive 1.8v-10v nonrepetitive rectangular waveform t j =25 c prior to initial pulse figure 7a. maximum surge power 1.891 volts 1000 700 500 300 200 100 70 50 30 20 10 7 5 3 2 1 0.01 0.1 1 10 100 1000 p pk , peak surge power (watts) pw, pulse width (ms) figure 7b. maximum surge power do-204ah 100200 volts 1000 500 200 100 50 20 10 1 2 5 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) figure 8. effect of zener current on zener impedance z z , dynamic impedance (ohms) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 20 30 50 70 100 v z , zener voltage (volts) figure 9. effect of zener voltage on zener impedance figure 10. typical forward characteristics rectangular waveform, t j =25 c 100-200volts nonrepetitive t j =25 c i z (rms)=0.1 i z (dc) f=60hz i z =1ma 5ma 20ma t j =25 c i z (rms)=0.1 i z (dc) f=60hz v z =2.7v 47v 27v 6.2v v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) minimum maximum 150 c 75 c 0 c 25 c
bzx79c2v4rl series http://onsemi.com 7 figure 11. zener voltage versus zener current e v z = 1 thru 16 volts v z , zener voltage (volts) i z , zener current (ma) 20 10 1 0.1 0.01 1 2 34 56 7 8 910111213141516 t a =25 figure 12. zener voltage versus zener current e v z = 15 thru 30 volts v z , zener voltage (volts) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 1 0.1 0.01 t a =25 i z , zener current (ma)
bzx79c2v4rl series http://onsemi.com 8 figure 13. zener voltage versus zener current e v z = 30 thru 105 volts v z , zener voltage (volts) 10 1 0.1 0.01 30 35 40 45 50 55 60 70 75 80 85 90 95 100 figure 14. zener voltage versus zener current e v z = 110 thru 220 volts v z , zener voltage (volts) 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 10 1 0.1 0.01 t a =25 65 105 i z , zener current (ma) i z , zener current (ma)
bzx79c2v4rl series http://onsemi.com 9 outline dimensions 500 mw do35 glass zener voltage regulators axial leaded glass do35/d0204ah case 29902 issue a notes: 1. package contour optional within a and b heat slugs, if any, shall be included within this cylinder, but not subject to the minimum limit of b. 2. lead diameter not controlled in zone f to allow for flash, lead finish buildup and minor irregularities other than heat slugs. 3. polarity denoted by cathode band. 4. dimensioning and tolerancing per ansi y14.5m, 1982. all jedec dimensions and notes apply. dim min max min max inches millimeters a 3.05 5.08 0.120 0.200 b 1.52 2.29 0.060 0.090 d 0.46 0.56 0.018 0.022 f --- 1.27 --- 0.050 k 25.40 38.10 1.000 1.500 b d k k f f a
bzx79c2v4rl series http://onsemi.com 10 notes
bzx79c2v4rl series http://onsemi.com 11 notes
bzx79c2v4rl series http://onsemi.com 12 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bzx79c2v4rl/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

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